Dielectric relaxation study of amorphous TiTaO thin films in a large operating temperature range
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4761980
Reference27 articles.
1. Dielectric relaxation study of amorphous TiTaO thin films in a large operating temperature range
2. Tantalum Nitride Interface Layer Influence on Dielectric Properties of Hafnium Doped Tantalum Oxide High Dielectric Constant Thin Films
3. Composition of Ta2O5 stacked films on N2O- and NH3-nitrided Si
4. Improved Stress Reliability of Analog TiHfO Metal–Insulator–Metal Capacitors Using High-Work-Function Electrode
5. Atomic Vapor Depositions of Ti–Ta–O thin films for Metal–Insulator–Metal applications
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1. On the chemistry, photocatalytical, and corrosion behavior of co-sputtered tantalum and titanium oxynitride thin films;Applied Surface Science;2022-08
2. Enhanced photoelectrochemical properties of Ta-TiO 2 nanotube arrays prepared by magnetron sputtering;Vacuum;2017-04
3. Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications;Thin Solid Films;2016-05
4. Impedance and electric modulus study of amorphous TiTaO thin films: highlight of the interphase effect;Journal of Physics D: Applied Physics;2013-01-14
5. Electrical Characteristics of TiTaO Thin Films Deposited on SiO2/Si Substrates by Magnetron Sputtering;ECS Solid State Letters;2013-01-05
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