Epitaxial deposition of GaAs and GaAsP on Ge substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325284
Reference22 articles.
1. The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and Phosphine
2. Oriented Growth of Semiconductors. III. Growth of Gallium Arsenide on Germanium
3. Optical Characterization of GaAs Layers Grown on Ge Substrates
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1. Heteroepitaxy of GaAs on (001) ⇒ 6° Ge substrates at high growth rates by hydride vapor phase epitaxy;Journal of Applied Physics;2013-05-07
2. Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers;Journal of Applied Physics;2003-01
3. GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices;Japanese Journal of Applied Physics;2001-06-15
4. References;Thin Films by Chemical Vapour Deposition;1990
5. A non-radiative recombination in GaAs0.61P0.39:Ge;Journal of Physics and Chemistry of Solids;1983-01
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