Effects of broad-waveguide structure in 0.8 μm high-power InGaAsP/InGaP/AlGaAs lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124845
Reference18 articles.
1. 8.8 W CW power from broad-waveguide Al-free active-region ( = 805 nm) diode lasers
2. High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers
3. Long-term reliability of Al-free InGaAsP/GaAs (λ=808 nm) lasers at high-power high-temperature operation
4. High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers
5. High-power InGaAs(P)/InGa(Al)P/GaAs semiconductor diode lasers
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