Nanowire-density-dependent field emission of n-type 3C-SiC nanoarrays-Reference-Cited by-同舟云学术

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Nanowire-density-dependent field emission of n-type 3C-SiC nanoarrays

Published:2015-09-21 Issue:12 Volume:107 Page:122108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Lin¹²,Gao Fengmei¹,Chen Shanliang¹,Li Chengming²,Yang Weiyou¹

Affiliation:

1. Institute of Materials, Ningbo University of Technology, Ningbo City 315016, People's Republic of China

2. Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing City 100083, People's Republic of China

Funder

Foundation of Educational Committee in Zhejiang Province of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4931753

Reference31 articles.

1. Inorganic semiconductor nanostructures and their field-emission applications

2. ZnS Nanostructure Arrays: A Developing Material Star

3. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

4. Low-dimensional SiC nanostructures: Fabrication, luminescence, and electrical properties

5. Electron affinity of AlxGa1−xN(0001) surfaces

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