Metalorganic molecular‐beam epitaxy of InGaP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342757
Reference20 articles.
1. 680‐nm band GaInP/AlGaInP tapered stripe laser
2. High‐power (1.4 W) AlGaInP graded‐index separate confinement heterostructure visible (λ∼658 nm) laser
3. Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction byC‐Vprofiling
4. Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0.66–0.68 μm at room temperatures
5. Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
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1. Effect of interfacial AsH3 surge treatment on GaInP/GaAs dual-junction solar cells grown by metal–organic vapor phase epitaxy;Japanese Journal of Applied Physics;2018-07-20
2. Synchrotron Photoemission Spectroscopy Study of p-GaInP2(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions;The Journal of Physical Chemistry C;2017-04-14
3. Comparison of wet chemical treatment and Ar-ion sputtering for GaInP2(100) surface preparation;Materials Science in Semiconductor Processing;2016-08
4. Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine;Journal of Materials Science;2006-10-20
5. Effects of cracker cell temperature and V/III ratio on GaInP grown by chemical beam epitaxy using TIPGa, EDMIn and TBP;Journal of Materials Science;2003
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