A multichamber system for in situ lithography and epitaxial growth of GaAs
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1142429
Reference26 articles.
1. Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
2. Emerging technology for in situ processing: Patterning alternatives
3. Maskless ion implantation technology for III–V compound semiconductors
4. Application of focused ion beam technology to maskless ion implantation in a molecular beam epitaxy grown GaAs or AlGaAs epitaxial layer for three‐dimensional pattern doping crystal growth
5. Insitupattern formation and high quality overgrowth by gas source molecular beam epitaxy
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