GaN ultraviolet photodetector with petal-like β-Ga2O3 microcrystalline layer
Author:
Affiliation:
1. Shaanxi Key Laboratory of Photonics Technology for Information, Xi’an Jiaotong University, Xi’an 710049, China
2. Institute of Advanced Optoelectronics, Xi’an Jiaotong University, Xi’an 710049, China
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0028550
Reference39 articles.
1. Dual-band deep ultraviolet AlGaN photodetectors
2. Deep UV photon-counting detectors and applications
3. Dark current suppression of MgZnO metal-semiconductor-metal solar-blind ultraviolet photodetector by asymmetric electrode structures
4. Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector
5. High-quality visible-blind AlGaN p-i-n photodiodes
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