Ga<sub>2</sub>O<sub>3</sub>/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity-Reference-Cited by-同舟云学术

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Ga₂O₃/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

Published:2022-11-13 Issue:11 Volume:4 Page:5641-5651
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Varshney Urvashi¹²,Sharma Anuj¹²,Vashishtha Pargam¹²³,Goswami Lalit¹,Gupta Govind¹²^ORCID

Affiliation:

1. Academy of Scientific & Innovative Research, CSIR-HRDC Campus, Ghaziabad201002, Uttar Pradesh, India

2. CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi110012, India

3. School of Electrical and Electronic Engineering, RMIT University, Melbourne, Victoria3000, Australia

Funder

University Grants Commission

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01362

Reference70 articles.

1. Fabrication ofβ-Ga2O3/ZnO heterojunction for solar-blind deep ultraviolet photodetection

2. New concept ultraviolet photodetectors

3. Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction

4. Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

5. Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications

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4. High-Performance Solar-Blind Photodetector Based on (010)-Plane β-Ga₂O₃ Thermally Oxidized from Nonpolar (110)-Plane GaN;ACS Applied Materials & Interfaces;2024-04-11

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