Laser-induced Zn doping in GaN based light-emitting diode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3367725
Reference13 articles.
1. Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN
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3. Proceedings of Optoelectronic and Microelectronic Materials and Devices;Afifuddin A.,2000
4. Microwave plasma assisted LCVD growth and characterization of GaN
5. Activation of Mg Acceptor in GaN : Mg with Pulsed KrF (248 nm) Excimer Laser Irradiation
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