Fast crystal nucleation induced by surface oxidation in Si-doped GeTe amorphous thin film
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4726107
Reference17 articles.
1. High Performance Media for Phase Change Optical Recording
2. Influence of capping layers on the crystallization of doped SbxTe fast-growth phase-change films
3. Crystallization times of Ge–Te phase change materials as a function of composition
4. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory
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2. Atomic-scale investigation on endurance mechanism of the GeTex-based OTS device by Si doping;Vacuum;2023-07
3. Understanding the Crystallization Behavior of Surface-Oxidized GeTe Thin Films for Phase-Change Memory Application;ACS Applied Electronic Materials;2019-04-24
4. Localized states evolution and nitrides separation before crystallization in nitrogen incorporated GeTe: Evidence from ellipsometric spectra;Applied Physics Letters;2017-04-17
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