Localized states evolution and nitrides separation before crystallization in nitrogen incorporated GeTe: Evidence from ellipsometric spectra
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4980851
Reference26 articles.
1. Who Wins the Nonvolatile Memory Race?
2. Phase-change materials for rewriteable data storage
3. Low-cost and nanoscale non-volatile memory concept for future silicon chips
4. Nanosecond switching in GeTe phase change memory cells
5. Crystallization times of Ge–Te phase change materials as a function of composition
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1. Non-volatile tunable optics by design: From chalcogenide phase-change materials to device structures;Materials Today;2023-09
2. Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films;Materials Letters;2022-12
3. Dielectric functions evolution and electronic bandgap manipulation by silicon doping for Sb2Te3 phase change films: Temperature dependent spectroscopic ellipsometry study;Journal of Applied Physics;2022-11-28
4. PLD-derived Ge 2 Sb 2 Te 5 phase-change films with extreme bending stability for flexible device applications;Applied Physics Letters;2020-04-20
5. Phase Change Materials for Nonvolatile, Solid‐State Reflective Displays: From New Structural Design Rules to Enhanced Color‐Changing Performance;Advanced Optical Materials;2020-03-12
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