Fabrication of in-plane gate transistors on hydrogenated diamond surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1545152
Reference10 articles.
1. Electrical properties of Schottky barrier formed on as‐grown and oxidized surface of homoepitaxially grown diamond (001) film
2. Enhancement mode metal‐semiconductor field effect transistors using homoepitaxial diamonds
3. Diamond surface-channel FET structure with 200 V breakdown voltage
4. Surface state density distribution of semiconducting diamond films measured from the Al/CaF2/i-diamond metal-insulator-semiconductor diodes and transistors
5. Capacitance–voltage studies of Al-Schottky contacts on hydrogen-terminated diamond
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