Si particle density reduction in Si molecular beam epitaxy using a deflection electrode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100900
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1. Dependence of residual damage on temperature during Ar+sputter cleaning of silicon
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1. Characterization of SiGe strained heterostructures grown by molecular beam epitaxy using a Si effusion cell;Thin Solid Films;1998-05
2. Molecular beam epitaxy of SiGe heterostructures using a newly designed Si effusion cell;Materials Science and Engineering: B;1998-02
3. Techniques for the Growth of Crystalline Films by Molecular Beam Deposition;Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices;1993
4. Molecular Beam Epitaxy;Thin Film Processes;1991
5. Silicon molecular beam epitaxy: Highlights of recent work;Journal of Electronic Materials;1990-10
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