Full band Monte Carlo study of high field transport in cubic phase silicon carbide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1554472
Reference23 articles.
1. Temperature dependence of electrical properties ofn‐ andp‐type 3C‐SiC
2. Nitrogen implantation in (100)‐β‐SiC layers grown on Si substrate
3. Relativistic band structure calculation of cubic and hexagonal SiC polytypes
4. Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]
5. Inversion-Type Mos Field Effect Transistors Using CVD Grown Cubic SiC on Si
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4. Modeling of radiation-induced defect recovery in 3C-SiC under high field bias conditions;Computational Materials Science;2019-04
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