Strain driven migration of In during the growth of InAs/GaAs quantum posts-Reference-Cited by-同舟云学术

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Strain driven migration of In during the growth of InAs/GaAs quantum posts

Published:2013-08 Issue:2 Volume:1 Page:022112
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Alonso-Álvarez D.,Alén B.,Ripalda J. M.,Rivera A.,Taboada A. G.,Llorens J. M.,González Y.,González L.,Briones F.

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/aplmater/1/2/1.4818358.pdf?itemId=/content/aip/journal/aplmater/1/2/10.1063/1.4818358&mimeType=pdf&containerItemId=content/aip/journal/aplmater

Reference18 articles.

1. Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001)

2. Thermo-piezochemistry of InAs on GaAs(001)

3. Enhanced Nucleation and Enrichment of Strained-Alloy Quantum Dots

4. Epitaxial growth kinetics with interacting coherent islands

5. Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Luminescence efficiency and carrier dynamics for InGaAs/GaAs surface quantum dots in coupled heterostructures;Journal of Luminescence;2024-11

2. Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures;Crystals;2022-02-24

3. Topology Driven g -Factor Tuning in Type-II Quantum Dots;Physical Review Applied;2019-04-04

4. Effect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga0.5In0.5P;Journal of Applied Physics;2019-02-07

5. Initial stage of cubic GaN for heterophase epitaxial growth induced on nanoscale v-grooved Si(001) in metal-organic vapor-phase epitaxy;Nanotechnology;2018-11-09

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