Hafnium oxide gate stack prepared by in situ rapid thermal chemical vapor deposition process for advanced gate dielectrics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1500420
Reference9 articles.
1. Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/
2. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
3. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
4. Band offsets of wide-band-gap oxides and implications for future electronic devices
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