Microscopic reflection difference spectroscopy for strain field of GaN induced by Berkovich nanoindentation
Author:
Funder
NNSFC
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4864081
Reference15 articles.
1. InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates
2. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
3. Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy
4. Micro-Raman imaging of GaN hexagonal island structures
5. In‐plane optical anisotropy of GaAs/AlAs multiple quantum wells probed by microscopic reflectance difference spectroscopy
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