Optoelectronic properties in quantum-confined germanium dots-Reference-Cited by-同舟云学术

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Optoelectronic properties in quantum-confined germanium dots

Published:2007-10 Issue:14 Volume:91 Page:141117
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Scarselli M.,Masala S.,Castrucci P.,De Crescenzi M.,Gatto E.,Venanzi M.,Karmous A.,Szkutnik P. D.,Ronda A.,Berbezier I.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2793179

Reference27 articles.

1. Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials

2. Visible photoluminescence from nanocrystallite Ge embedded in a glassySiO2matrix: Evidence in support of the quantum-confinement mechanism

3. L−to−Xcrossover in the conduction-band minimum of Ge quantum dots

4. Quantum confinement in germanium nanocrystals

5. Structure- and spin-dependent excitation energies and lifetimes of Si and Ge nanocrystals fromab initiocalculations

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1. Interplay of Quantum Confinement and Strain Effects in Type I to Type II Transition in GeSi Core–Shell Nanocrystals;The Journal of Physical Chemistry C;2023-01-05

2. Structural and photoluminescence study of TiO2 layer with self-assembled Si1−xGex nanoislands;Journal of Applied Physics;2020-08-28

3. Red-luminescence band: A tool for the quality assessment of germanium and silicon nanocrystals;Applied Surface Science;2017-10

4. Local structure of Ge quantum dots determined by combined numerical analysis of EXAFS and XANES data;Journal of Synchrotron Radiation;2016-01-01

5. Direct Evaluation of the Quantum Confinement Effect in Single Isolated Ge Nanocrystals;The Journal of Physical Chemistry Letters;2015-08-18

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