Laser‐compatible InGaAs/GaAs strained layer waveguide electroabsorption modulators
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105764
Reference9 articles.
1. Multiple quantum well (MQW) waveguide modulators
2. Laser compatible waveguide electroabsorption modulator with high contrast and low operating voltage in GaAs/AlGaAs
3. Laser-compatible wave-guide electroabsorption modulators
4. Experimental and theoretical electroabsorption in an InGaAs–GaAs strained-layer superlattice, and the performance of a wave-guide modulator
5. InxGa1−xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength range
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1. Photoreflectance and photoluminescence spectroscopy of the lattice-matched InGaAs/InAlAs single quantum well;Journal of Applied Physics;2002-07-15
2. Waveguide modulator structures with soft optical confinement grown by the epitaxial shadow mask (ESM) MBE-technique;Journal of Crystal Growth;1997-05
3. Quantum‐well intermixing for optoelectronic integration using high energy ion implantation;Journal of Applied Physics;1995-09-15
4. Polarization-insensitive high-contrast GaAs/AlGaAs waveguide modulator based on the Franz-Keldysh effect;IEEE Photonics Technology Letters;1993-12
5. Exciton optical absorption in disordered, strained InGaAs/GaAs single quantum wells;Superlattices and Microstructures;1993-04
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