Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces-Reference-Cited by-同舟云学术

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Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces

Published:2021-05-17 Issue:20 Volume:118 Page:204005
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hijikata Yasuto¹^ORCID,Komori Shota¹,Otojima Shunsuke¹,Matsushita Yu-Ichiro²^ORCID,Ohshima Takeshi³^ORCID

Affiliation:

1. Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan

2. Tokyo Tech Academy for Convergence of Materials and Informatics, Tokyo Institute of Technology, Yokohama 226-8503, Japan

3. Quantum Beam Science Research Directorate, National Institutes for Quantum and Radiological Science and Technology, Gunma 370-1292, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0048772

Reference19 articles.

1. Silicon carbide light-emitting diode as a prospective room temperature source for single photons

2. Quantum Teleportation with a Quantum Dot Single Photon Source

3. Electrically driven single-photon source at room temperature in diamond

4. Coherent control of single spins in silicon carbide at room temperature

5. Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide

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1. Oxygen-related defects in 4H-SiC from first principles;Applied Physics Express;2024-05-01

2. Generation of single photon emitters at a SiO₂/SiC interface by high-temperature oxidation and reoxidation at lower temperatures;Applied Physics Express;2024-05-01

3. Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing;Applied Physics Letters;2023-09-04

4. Impact of the oxidation temperature on the density of single-photon sources formed at SiO2/SiC interface;APL Materials;2023-09-01

5. Co-wide-bandgap conformally heteroepitaxial perovskite–monolithic SiC nanowire array with quantum-confined blue luminescence;Applied Physics Express;2023-06-01

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