Slow interfacial reamorphization of Ge films melted by ps laser pulses
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368598
Reference27 articles.
1. Nucleation of amorphous germanium from supercooled melts
2. Pulsed laser‐induced melting followed by quenching of silicon films
3. Theoretical Analysis of Explosively Propagating Molten Layers in Pulsed-Laser-Irradiateda−Si
4. Laser beam application to thin film transistors
5. Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser Irradiation
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3. Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation;Journal of Applied Physics;2008-01-15
4. In-Situ and Ex-Situ Measurements on Silicon Thin Films Fabricated by Excimer Laser Annealing;Journal of Physics: Conference Series;2006-10-01
5. Determination of the absolute fluence profile in pulsed laser processing using melt-induced phase changes in an amorphous silicon thin film;Review of Scientific Instruments;2006-05
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