Photoluminescence excitation spectroscopy of GaxIn1−xAsyP1−y/InP quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99927
Reference15 articles.
1. Hole mass measurement in p-type InP and GaP by submillimetre cyclotron resonance in pulsed magnetic fields
2. Photovoltaic effect and interband magneto-optical transitions in InP
3. Interband magnetoabsorption of In_{0.53}Ga_{0.47}As
4. Interband magnetoabsorption of In_{0.53}Ga_{0.47}As
5. An experimental determination of the effective masses for GaxIn1−xAsyP1−yalloys grown on InP
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2. Determination of band offsets in strained InAsxP1−x/InP quantum well by capacitance voltage profile and photoluminescence spectroscopy;Journal of Applied Physics;2011-04-15
3. Structural, electronic, optical and thermal properties of AlxGa1−xAsySb1−y quaternary alloys: First-principles study;Journal of Alloys and Compounds;2010-08
4. Luminescent properties of annealed and directly wafer-bonded InAsP/InGaAsP multiple quantum wells;Semiconductor Science and Technology;2005-04-27
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