Study on surface photovoltage measurement of long diffusion length silicon: Simulation results
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355343
Reference22 articles.
1. Heavy metal contamination during integrated-circuit processing: Measurements of contamination level and internal gettering efficiency by surface photovoltage
2. The Effect of Heavy Metal Contamination on Defects in CCD Imagers: Contamination Monitoring by Surface Photovoltage
3. Determination of the oxygen precipitate-free zone width in silicon wafers from surface photovoltage measurements
4. A fast, preparation‐free method to detect iron in silicon
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1. Diffusion Coefficient at Double Resonances in Frequency and Temperature, Applied to (n<sup>+</sup>/p/p<sup>+</sup>) Silicon Solar Cell Base Thickness Optimization under Long Wavelength Illumination;Journal of Electromagnetic Analysis and Applications;2022
2. Surface voltage and surface photovoltage: history, theory and applications;Measurement Science and Technology;2001-02-16
3. Iron contamination in silicon technology;Applied Physics A: Materials Science & Processing;2000-05-01
4. Surface photovoltage phenomena: theory, experiment, and applications;Surface Science Reports;1999-12
5. Minority Carrier Lifetime Dependence on Resistivity in High‐Purity p‐Type Silicon;Journal of The Electrochemical Society;1999-09-01
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