Growth of single crystal Ge films on GaAs and InGaP and highly oriented Au films on Ge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111495
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1. Non‐alloyed ohmic contact ton‐GaAs by solid phase epitaxy
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3. Low‐resistance nonspiking ohmic contact for AlGaAs/GaAs high electron mobility transistors using the Ge/Pd scheme
4. Microstructure and contact resistance temperature dependence of Pt/Ti ohmic contact to Zn‐doped GaAs
5. Low‐temperature annealed contacts to very thin GaAs epilayers
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