Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3501136
Reference20 articles.
1. Scattering time and single-particle relaxation time in a disordered two-dimensional electron gas
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3. Colloquium: Transport in strongly correlated two dimensional electron fluids
4. Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor
5. Resonant Tunneling through Single Electronic States and Its Suppression in a Magnetic Field
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