Theoretical studies of defect‐initiated particle emission from GaP(110) surfaces: Basis for a new technique of generating perfect surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106716
Reference10 articles.
1. Determination of the local electronic structure of atomic‐sized defects on Si(001) by tunneling spectroscopy
2. Determination of the local electronic structure of atomic‐sized defects on Si(001) by tunneling spectroscopy
3. Characterization of surface defects by means of laser-induced Ga0emission from GaP surfaces
4. Temperature dependence of the laser-induced Ga0 emission from a GaP(110) surface
5. Laser-induced electronic processes on GaP (110) surfaces: Particle emission and ablation initiated by defects
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1. Excitation-induced germanium quantum dot formation on Si(100)-(2×1);Journal of Applied Physics;2010-08
2. Defects in III-V semiconductor surfaces;Applied Physics A: Materials Science & Processing;2002-07-01
3. Atomic structure of point defects in compound semiconductor surfaces;Current Opinion in Solid State and Materials Science;2001-04
4. Nano-scale properties of defects in compound semiconductor surfaces;Surface Science Reports;1999-01
5. Laser interaction with Br-GaAs(110): Etching and atomic desorption;Physical Review B;1998-10-15
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