Reduction of surface recombination current in GaAsp‐njunctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90886
Reference10 articles.
1. Surface effects of GaAs0·6P0·4 light emitting diodes
2. Green-emitting diodes in vapor phase epitaxial GaP
3. Effect of surface treatment on surface recombination velocity and diode leakage current in GaP
4. The effect of surface recombination on current in AlxGa1−xAs heterojunctions
5. Effect of interface recombination at AlxGa1−xAs p–n junction perimeters on photoluminescence and current
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