Surface electronic structure of HfO2 resolved with low energy ion spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2367659
Reference20 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
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3. Hafnium oxide gate stack prepared by in situ rapid thermal chemical vapor deposition process for advanced gate dielectrics
4. Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks
5. Compatibility of silicon gates with hafnium-based gate dielectrics
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1. Band bending and k -resolved band offsets at the HfO2/n+(p+)Si interfaces explored with synchrotron-radiation ARPES/XPS;Physical Review Materials;2022-08-30
2. Possible origin of ferromagnetism in undoped monoclinic HfO 2 film;Computational Materials Science;2014-09
3. Investigation of bulk defects in amorphous and crystalline HfO2 thin films;Microelectronic Engineering;2011-07
4. Electron paramagnetic resonance characterization of defects in monoclinic HfO2 and ZrO2 powders;Journal of Applied Physics;2009-11-15
5. Electron paramagnetic resonance characterization of defects in HfO[sub 2] and ZrO[sub 2] powders and films;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009
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