Reversible charge injection in antiferroelectric thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3039073
Reference14 articles.
1. RELEASE OF ELECTRIC ENERGY IN PbNb(Zr, Ti, Sn)O3BY TEMPERATURE‐ AND BY PRESSURE‐ENFORCED PHASE TRANSITIONS
2. “Square” hysteresis loops in phase-switching Nb-doped lead zirconate stannate titanate thin films
3. Charge release of lanthanum-doped lead zirconate titanate stannate antiferroelectric thin films
4. Uncooled tunable pyroelectric response of antiferroelectric Pb0.97La0.02(Zr0.65Sn0.22Ti0.13)O3 perovskite
5. Giant Electrocaloric Effect in Thin-Film PbZr 0.95 Ti 0.05 O 3
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1. Achieving higher dynamic discharge energy and power density in PLZST antiferroelectrics with lower quasi-static recoverable energy density via tuning the phase transition properties;Applied Physics Letters;2022-08-22
2. Sm-doping induced large enhancement of antiferroelectric and energy storage performances of (111) oriented PbZrO3 thin films;Ceramics International;2019-12
3. W-doping induced antiferroelectric to ferroelectric phase transition in PbZrO3 thin films prepared by chemical solution deposition;Applied Physics Letters;2013-04-29
4. Characteristics and dielectric properties of (Pb0.97−xLa0.02Bax)(Zr0.72Sn0.22Ti0.06)O3 ceramics;Journal of Alloys and Compounds;2012-10
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