W-doping induced antiferroelectric to ferroelectric phase transition in PbZrO3 thin films prepared by chemical solution deposition
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4803941
Reference26 articles.
1. Tunable electric properties of PbZrO3 films related to the coexistence of ferroelectricity and antiferroelectricity at room temperature
2. Microstructure and electrical properties of (120)O-oriented and of (001)O-oriented epitaxial antiferroelectric PbZrO3 thin films on (100) SrTiO3 substrates covered with different oxide bottom electrodes
3. Preparation of crack-free antiferroelectric PbZrO3 thin films by a two-step annealing process
4. Reactive magnetron co‐sputtered antiferroelectric lead zirconate thin films
5. Effect of Eu Doping on the Electrical Properties and Energy Storage Performance of PbZrO3Antiferroelectric Thin Films
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