Subject
General Physics and Astronomy
Cited by
24 articles.
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1. Ion implantation technology for silicon carbide;Surface and Coatings Technology;2016-11
2. Release of Al from SiC targets used for radioactive ion beam production;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-11
3. Dopant ion implantation simulations in 4H-Silicon Carbide;Modelling and Simulation in Materials Science and Engineering;2004-09-17
4. Release and diffusion rate of helium in neutron-irradiated SiC;J NUCL SCI TECHNOL;2004
5. Release and Diffusion Rate of Helium in Neutron-Irradiated SiC;Journal of Nuclear Science and Technology;2004-07