Dopant ion implantation simulations in 4H-Silicon Carbide-Reference-Cited by-同舟云学术

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Dopant ion implantation simulations in 4H-Silicon Carbide

Published:2004-09-17 Issue:6 Volume:12 Page:1139-1146
ISSN:0965-0393
Container-title:Modelling and Simulation in Materials Science and Engineering
language:
Short-container-title:Modelling Simul. Mater. Sci. Eng.

Author:

Phelps G J

Publisher

IOP Publishing

Subject

Computer Science Applications,Mechanics of Materials,Condensed Matter Physics,General Materials Science,Modelling and Simulation

Reference26 articles.

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