HIGH‐POWER AND HIGH‐EFFICIENCY GaAs AVALANCHE DIODES
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1652808
Reference3 articles.
1. Characteristics of varactors biased into avalanche
2. High-efficiency X-band GaAs IMPATT diodes
3. Microwave amplification with GaAs avalanche diodes
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaAs Technology Perspective;GaAs Microelectronics;1985
2. Auger Characterization of Chemically Etched GaAs Surfaces;Journal of The Electrochemical Society;1977-01-01
3. Noise characteristics of GaAs and Si IMPATT diodes for 50-GHz range operation;IEEE Transactions on Electron Devices;1975-08
4. Fabrication and performance of GaAs p+n junction and Schottky barrier millimeter IMPATT's;IEEE Transactions on Electron Devices;1974-01
5. Design considerations of high-efficiency GaAs IMPATT diodes;IEEE Transactions on Electron Devices;1973-06
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