Noise characteristics of GaAs and Si IMPATT diodes for 50-GHz range operation
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31740/01478012.pdf?arnumber=1478012
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Study on the Noise Performance of an Si based IMPATT Device for Different Junction Temperature;2020 IEEE Calcutta Conference (CALCON);2020-02
2. Microwave IMPATT Diode Amplifiers and Oscillators;Handbook of Microwave Technology;1995
3. Microwave IMPATT Diode Amplifiers and Oscillators;Components and Devices;1995
4. Two-terminal millimetre wave devices;Annales Des Télécommunications;1992-11
5. A highly sensitive millimeter wave quasi-optical FM noise measurement system;IEEE Transactions on Microwave Theory and Techniques;1991
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