Anomalous band alignment change of SiO2/4H–SiC (0001) and (000–1) MOS capacitors induced by NO-POA and its possible origin
Author:
Affiliation:
1. Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
Funder
Grants-in-Aid for Scientific Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5135606
Reference28 articles.
1. Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy
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