Investigation of AlxGayIn1−x−yP as a Schottky layer of AlInAs/GaInAs high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111507
Reference10 articles.
1. 650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistors
2. W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
3. High performance Al0.48In0.52As/Ga0.47In0.53As HFETs
4. Barrier height lowering of Schottky contacts on AlInAs layers grown by metal‐organic chemical‐vapor deposition
5. The effect of interface and alloy quality on the DC and RF performance of Ga/sub 0.47/In/sub 0.53/As-Al/sub 0.48/In/sub 0.52/As HEMTs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy;Japanese Journal of Applied Physics;2008-04-25
2. Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers;Japanese Journal of Applied Physics;2005-06-10
3. Nonselective wet chemical etching of GaAs and AlGaInP for device applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-01
4. Al composition dependence of Schottky barrier heights and conduction band offsets of AlxIn1−xP/Ga0.47In0.53As on InP;Journal of Applied Physics;1996-08
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