Intrinsic and extrinsic effects on the ferroelectric switching of thin poly(vinylidene fluoride/trifluoroethylene) copolymer films-Reference-Cited by-同舟云学术

Intrinsic and extrinsic effects on the ferroelectric switching of thin poly(vinylidene fluoride/trifluoroethylene) copolymer films

Published:2016-04 Issue:4 Volume:4 Page:046107
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Mai Manfang¹²,Ke Shanming¹^ORCID,Lin Peng¹,Zeng Xierong¹²

Affiliation:

1. Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China

2. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China

Funder

Science and Technology Research Items of Shenzhen

National Natural Science Foundation of China (NSFC)

China Postdoctoral Science Foundation

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4947142

Reference35 articles.

1. Low-voltage operation of metal-ferroelectric-insulator-semiconductor diodes incorporating a ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett film

2. Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes

3. High-performance solution-processed polymer ferroelectric field-effect transistors

4. Ferroelectric field effect transistors using very thin ferroelectric polyvinylidene fluoride copolymer films as gate dielectrics

5. A. Rusu, A. Salvatore, D. Jiménez, and A. M. Ionesc, IEEE International Electron Devices Meeting (IEEE, 2010), p. 395.

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