Low-voltage operation of metal-ferroelectric-insulator-semiconductor diodes incorporating a ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett film-Reference-Cited by-同舟云学术

Low-voltage operation of metal-ferroelectric-insulator-semiconductor diodes incorporating a ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett film

Published:2006-07-15 Issue:2 Volume:100 Page:024110
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gerber A.,Kohlstedt H.,Fitsilis M.,Waser R.,Reece T. J.,Ducharme S.,Rije E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2218463

Reference24 articles.

1. A new solid state memory resistor

2. H. Kohlstedt and H. Ishiwara, inNanoelectronics and Information Technology, edited by R. Waser (Wiley-VDC, Weinheim, 2002), p. 387.

3. Carrier tunneling in a novel asymmetric quantum well structure

4. Ferroelectric field-effect transistor with a SrRuxTi1−xO3 channel

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen Bonding-Assisted Complete Ferroelectric β-Phase Conversion in Poly(vinylidene fluoride) Thin Films: Exhibiting an Excellent Memory Window and Long Retention;Langmuir;2023-07-17

2. Long term retention in δ‐PVDF thin film prepared by rapid ice quenching technique;Journal of Applied Polymer Science;2023-02-04

3. Polarization of ferroelectric polymers through electrolytes;Organic Ferroelectric Materials and Applications;2022

4. Poly(Vinylidenefluoride-Trifluoroethylene) P(VDF-TrFE)/Semiconductor Structure Ferroelectric-Gate FETs;Topics in Applied Physics;2020

5. Characterization and Application of PVDF and Its Copolymer Films Prepared by Spin-Coating and Langmuir–Blodgett Method;Polymers;2019-12-08