Recombination processes in quantum well lasers with superlattice barriers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102023
Reference9 articles.
1. The influence of bulk nonradiative recombination in the wide band‐gap regions of molecular beam epitaxially grown GaAs‐AlxGa1−xAs DH lasers
2. Influence of broadening and high-injection effects on GaAs-AlGaAs quantum well lasers
3. Influence of the barriers on the temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers
4. Optimizing the performance of AlGaAs graded index separate confining heterostructure quantum well lasers
5. Short‐period (AlAs)(GaAs) superlattice lasers grown by molecular beam epitaxy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Nature of Auger Recombination in Type-I Quantum Well Lasers Operating in the Mid-Infrared;IEEE Journal of Selected Topics in Quantum Electronics;2022-01
2. Electron State Symmetries and Optical Selection Rules in the (GaAs)m(AlAs)n Superlattices Grown along the [001], [110], and [111] Directions;Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum Devices;1998
3. Measurement and calculation of spontaneous recombination current and optical gain in GaAs‐AlGaAs quantum‐well structures;Journal of Applied Physics;1991-08
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