Enhanced polarization switching and energy storage properties of Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films with LaNiO3 oxide top electrodes-Reference-Cited by-同舟云学术

Enhanced polarization switching and energy storage properties of Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films with LaNiO3 oxide top electrodes

Published:2013-04-08 Issue:14 Volume:102 Page:142905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ge Jun,Dong Xianlin,Chen Ying,Cao Fei,Wang Genshui

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4801517

Reference23 articles.

1. Charge release of lanthanum-doped lead zirconate titanate stannate antiferroelectric thin films

2. Lanthanum doped lead zirconate titanate stannate antiferroelectric thin films from acetic acid-based sol–gel method

3. Large displacement transducers based on electric field forced phase transitions in the tetragonal (Pb0.97La0.02) (Ti,Zr,Sn)O3family of ceramics

4. Enhancement of charge and energy storage in sol-gel derived pure and La-modified PbZrO3 thin films

5. Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process

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