15% efficiency (1 sun, air mass 1.5), large‐area, 1.93 eV AlxGa1−xAs (x=0.37)n‐psolar cell grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99387
Reference13 articles.
1. Growth of high-quality 1.93-eV AIGaAs using metalorganic chemical vapor deposition
2. 18.7% efficient (1‐sun, AM0) large‐area GaAs solar cells
3. Computer modeling study of the effects of inhomogeneous doping and/or composition in GaAs solar‐cell devices
4. A new technique for gettering oxygen and moisture from gases used in semiconductor processing
5. Studies of GaAs and AlGaAs layers grown by OM-VPE
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3. Investigations on Al$_{\bm x}$Ga$_{\bm {1-x}}$As Solar Cells Grown by MOVPE;IEEE Journal of Photovoltaics;2015-01
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5. Devices;Organometallic Vapor-Phase Epitaxy;1999
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