Studies of GaAs and AlGaAs layers grown by OM-VPE-Reference-Cited by-同舟云学术

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Studies of GaAs and AlGaAs layers grown by OM-VPE

Published:1981-10 Issue:1 Volume:55 Page:58-63
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Saxena R.R.,Cooper C.B.,Ludowise M.J.,Hikido S.,Sardi V.M.,Borden P.G.

Funder

Spine Education and Research Institute

Army Research Office

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. The use of metalorganics in the preparation of semiconductor materials: Growth on insulating substrates

2. VPE Growth of III/V Semiconductors

3. The organometallic VPE growth of GaAs1−ySby using trimethylantimony and Ga1−xInxAs using trimethylarsenic

4. O.M. v.p.e. growth of AlGaSb and AlGaAsSb

5. Proc. NASA Solar Cell High Efficiency and Radiation Damage Conf.;Saxena,1980

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Al-As-Ga (Aluminium-Arsenic-Gallium);Non-Ferrous Metal Systems. Part 1;2006

2. Substrate-Polarity Dependence of AlN Single-Crystal Films Grown on 6H–SiC(0001) and (000\bar1) by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2003-05-15

3. Design of the OMVPE Process;Organometallic Vapor-Phase Epitaxy;1999

4. Overview of the OMVPE Process;Organometallic Vapor-Phase Epitaxy;1999

5. Diffusion during metalorganic vapor-phase epitaxy on V-groove patterned substrates;Journal of Applied Physics;1999-01

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