Substrate-Polarity Dependence of AlN Single-Crystal Films Grown on 6H–SiC(0001) and (000\bar1) by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Substrate-Polarity Dependence of AlN Single-Crystal Films Grown on 6H–SiC(0001) and (000\bar1) by Molecular Beam Epitaxy

Published:2003-05-15 Issue:Part 1, No. 5A Volume:42 Page:2829-2833
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Harada Masashi,Ishikawa Yukari,Saito Tomohiro,Shibata Noriyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=5R/a=2829/pdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrathin epitaxial MgB2 on SiC: Substrate surface-polarity-dependent properties;Physical Review Materials;2023-01-26

2. Epitaxial Ultrathin MgB2 Films on C-Terminated 6H–SiC ($000\bar{1}$) Substrates Grown by HPCVD;IEEE Transactions on Applied Superconductivity;2022-06

3. Effects of 6H-SiC substrate polarity on the morphology and microstructure of AlN films by HVPE with varied V/III ratio;Journal of Crystal Growth;2019-02

4. Role of SiC substrate polarity on the growth and properties of bulk AlN single crystals;Journal of Materials Science: Materials in Electronics;2014-07-04

5. Control of Polarity and Application to Devices;Oxide and Nitride Semiconductors;2009

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