The performance limits of epigraphene Hall sensors doped across the Dirac point-Reference-Cited by-同舟云学术

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The performance limits of epigraphene Hall sensors doped across the Dirac point

Published:2020-06-01 Issue:22 Volume:116 Page:223504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

He H.¹^ORCID,Shetty N.¹,Bauch T.¹,Kubatkin S.¹,Kaufmann T.²,Cornils M.²^ORCID,Yakimova R.³^ORCID,Lara-Avila S.¹⁴^ORCID

Affiliation:

1. Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96 Gothenburg, Sweden

2. TDK-Micronas GmbH, Hans-Bunte-Strasse 19, D-79108 Freiburg, Germany

3. Department of Physics, Chemistry and Biology, Linkoping University, 581 83 Linköping, Sweden

4. National Physical Laboratory, Hampton Road, Teddington TW11 0LW, United Kingdom

Funder

Chalmers Excellence Initiative Nano

VINNOVA

Stiftelsen för Strategisk Forskning

H2020 Marie Skłodowska-Curie Actions

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0006749

Reference39 articles.

1. Solid state magnetic field sensors and applications

2. Micro-Hall devices: performance, technologies and applications

3. An integrated micro-Hall probe for scanning magnetic microscopy

4. Mass production of InAs Hall elements by MBE

5. Electric Field Effect in Atomically Thin Carbon Films

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1. Ultralow 1/f noise in epigraphene devices;Applied Physics Letters;2024-02-26

2. Long-term stability of molecular doped epigraphene quantum Hall standards: single elements and large arrays (R _K/236 ≈ 109 Ω);Metrologia;2023-09-13

3. Interaction of H and Li with epitaxial graphene on SiC: A comparative analysis by first principles study;Applied Surface Science;2021-12

4. Ambipolar Gate Modulation Technique for the Reduction of Offset and Flicker Noise in Graphene Hall-Effect Sensors;IEEE Sensors Journal;2021-11-15

5. Ultrasensitive Magnetic Sensors Enabled by Heterogeneous Integration of Graphene Hall Elements and Silicon Processing Circuits;ACS Nano;2020-11-19

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