Ultrasensitive Magnetic Sensors Enabled by Heterogeneous Integration of Graphene Hall Elements and Silicon Processing Circuits-Reference-Cited by-同舟云学术

Ultrasensitive Magnetic Sensors Enabled by Heterogeneous Integration of Graphene Hall Elements and Silicon Processing Circuits

Published:2020-11-19 Issue:12 Volume:14 Page:17606-17614
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Dai Tongyu¹,Chen Chengying²,Huang Le¹,Jiang Jianhua³,Peng Lian-Mao¹^ORCID,Zhang Zhiyong¹^ORCID

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China

2. School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Fujian, Xiamen 361024, China

3. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Funder

Ministry of Science and Technology of the People's Republic of China

Beijing Municipal Science and Technology Commission

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c08435

Reference35 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The electronic properties of graphene

3. Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

4. 200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors

5. Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

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