Effects of a predeposited boron layer during the epitaxial growth of Ge on CaF2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110178
Reference17 articles.
1. Epitaxial Growth of Ge Films onto CaF2/Si Structures
2. Epitaxial growth of elemental semiconductor films onto silicide/Si and fluoride/Si structures
3. Heteroepitaxy of semiconductor‐on‐insulator structures: Si and Ge on CaF2/Si(111)
4. Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers
5. Heteroepitaxial Si-, Ge-, and Gaas-On-Insulator Structures on Si Substrates by Use of Fluoride Insulators
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1. Effects of deposition rate on the structure and electron density of evaporated BaSi2 films;Journal of Applied Physics;2016-07-22
2. Surfactant enhanced solid phase epitaxy of Ge/CaF2/Si(111): Synchrotron x-ray characterization of structure and morphology;Journal of Applied Physics;2011-11-15
3. Solid phase epitaxy of Ge films on CaF2/Si(111);Applied Surface Science;2007-10
4. Boron surfactant enhanced growth of thin Si films on CaF2∕Si;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-11
5. Thin Film Processes;Thin Film Materials Technology;2004
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