Distribution coefficient of carbon in melt‐grown GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339242
Reference14 articles.
1. Stoichiometry‐controlled compensation in liquid encapsulated Czochralski GaAs
2. Correlation of threshold voltage of implanted field‐effect transistors and carbon in GaAs substrates
3. Effective segregation coefficient of carbon impurity in LEC GaAs crystals
4. Calibration of the carbon localized vibrational mode absorption line in GaAs
5. Liquid phase epitaxy of high‐purity GaAs on conductingn‐type substrates
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1. Incorporation of Carbon by VGF-Growth of GaAs;Crystal Research and Technology;1999-02
2. Iron doped bulk semi‐insulating GaAs;Journal of Applied Physics;1993-04
3. Carbon in undoped Si-GaAs: The influence of growth conditions;Acta Physica Hungarica;1991-08
4. Low dislocation density GaAs grown by the vertical Bridgman technique;Journal of Materials Research;1990-07
5. Characterization and mapping of semi-insulating GaAs crystals grown by vertical zone melting and by vertical zone refining;Journal of Crystal Growth;1990-06
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