Electrical and optical characterization of Au/CaF2/p-Si(111) tunnel-injection diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4882375
Reference25 articles.
1. Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)
2. Electrical characterization and modeling of the Au/CaF2/nSi(111) structures with high-quality tunnel-thin fluoride layer
3. Epitaxial Growth and Electrical Characteristics of CaF2/Si/CaF2 Resonant Tunneling Diode Structures Grown on Si(111) 1°-off Substrate
4. CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio
5. Improved Reproducibility in CaF2/Fe3Si/CaF2Ferromagnetic Resonant Tunneling Diodes on Si(111) Substrates by Selected-Area Molecular Beam Epitaxy
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