Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting-Reference-Cited by-同舟云学术

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Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

Published:2018-01-07 Issue:1 Volume:123 Page:015304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Shklyaev A. A.¹²,Volodin V. A.¹²,Stoffel M.³,Rinnert H.³,Vergnat M.³^ORCID

Affiliation:

1. A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia

2. Novosibirsk State University, Novosibirsk 630090, Russia

3. Université de Lorraine, Institut Jean Lamour UMR CNRS 7198, B.P. 70239, 54506 Vandœuvre-lès-Nancy Cedex, France

Funder

Russian Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5009720

Reference49 articles.

1. Microstructure evolution during dewetting in thin Au films

2. Mechanisms of solid-state dewetting of thin Au films in different annealing atmospheres

3. Grain growth: The key to understand solid-state dewetting of silver thin films

4. Properties of three-dimensional structures prepared by Ge dewetting from Si(111) at high temperatures

5. Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100)

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