Synthesis and Characterization of Type II Ge-Si Clathrate Films for Optoelectronic Applications

Author:

Kumar Rahul1ORCID,Kurita Shiori2,Ohashi Fumitaka2,Iida Tamio1ORCID,Habuchi Hitoe1ORCID,Kume Tetsuji2

Affiliation:

1. Department of Electrical and Computer Engineering, National Institute of Technology (KOSEN), Gifu College, Gifu 501-0495, Japan

2. Faculty of Engineering, Gifu University, Gifu 501-1193, Japan

Abstract

Type II inorganic clathrates consist of cage-like structures with open frameworks, and they are considered promising materials due to their unique properties. However, the difficulty of synthesizing phase-pure and continuous films has hindered their application in practical devices. In this report, we demonstrate the synthesis of type II SiGe clathrate films through the thermal decomposition of a Na-deposited amorphous SiGe film on a sapphire substrate in a high vacuum. The as-prepared films of type II SiGe clathrates showed uniform growth and were evaluated for their structural and optical properties. Morphological studies conducted using a scanning electron microscope showed the presence of cracks on the film surface.

Funder

Japan Society of the Promotion of Science

The Koshiyama Science & Technology Foundation

Publisher

MDPI AG

Subject

General Materials Science

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